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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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Filtronic Solid State Features • • • • • • • • • • 3.5dB Typical Noise Figure 12.5dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Retur

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LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability October 2003 LM5110 Dual 5A Compound Gate Driver with Negative Output Vo

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE

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Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

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LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ 26 GHz to 30 GHz Frequency Band 3.0 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation +3 V Single

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PRELIMINARY PRODUCT INFORMATION www.DataSheet4U.com GaAs MULTI-CHIP MODULE MC-7894 1 GHz CATV 25 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7894

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Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datashe

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КТ8232 А, Б. N-P-N КРЕМНИЕВЫЙ ВЫСОКОВОЛЬТНЫЙ МОЩ НЫЙ СОСТАВНОЙ ТРАНЗИСТОР Предназначендляприменениявпереключающихиимпульсныхсхемах. Идеально подходит

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LM5111 Dual 5A Compound Gate DriverCapability July 2004 LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces

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PACKAGED LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.6 dB Noise Figure at 2 GHz ♦ 14 dB Associate

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NTE424 Non−Silicone Thermal Compound 1 oz. Plunger Tube Description: NTE424 heat sink compound is a grease−like, non−silicone, non−migrating material

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UNISONIC TECHNOLOGIES CO., LTD DTNN123J NPN SILICON TRANSISTOR COMPOUND TRANSISTORS  DESCRIPTION The UTC DTNN123J is an NPN epitaxial transistor;

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PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60%

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Filtronic Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return

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Filtronic Solid State Features • • • • • • • • 10dB Typical Gain 19dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequ

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