CS630 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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CS630F CS630F VDMOS 1. CS630F VDMOS ，、。： ● ● ● 10.4max ● ● ：TO-220F 15.5max 4.8max 2.7max 2. 2.1 ，Tamb= 25℃ （） Ta=25℃ Tc=25℃

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 12

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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Silicon N-Channel Power MOSFET CS630 A8H ○R General Description： CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CS630F A9H ○R General Description： CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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R JCS630 MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 9.0A 200 V 0.4Ω 22nC Package N N- CHANNEL MOSFET    UPS APPLICATIONS  High

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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ACS630MS January 1996 Radiation Hardened EDAC (Error Detection and Correction Circuit) Pinouts 28 PIN CERAMIC DUAL-IN-LINE, MIL-STD-1835 DESIGNATOR C

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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Standard Products UT54ACS630 RadHard EDAC Datasheet May 16, 2012 www.aeroflex.com/radhard FEATURES  DC operating voltage range 4.5V to 5.5V  Input

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Silicon N-Channel Power MOSFET ○R CS630 A4R General Description： CS630 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Silicon N-Channel Power MOSFET CS630 A3H ○R General Description： CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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