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Intel
D2115 - (D2114 / D2115) RAM
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NEC
UPD2114L-5 - 4K-Bit Static RAM
NEe Microcomputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI. PD2114L·5 DESCRIPTION 4098 BIT (1024 )( 4 BITS) STATIC RAM The NE.
NEC
UPD2114L-2 - 4K-Bit Static RAM
NEe Microcomputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI. PD2114L·5 DESCRIPTION 4098 BIT (1024 )( 4 BITS) STATIC RAM The NE.
NEC
UPD2114L-3 - 4K-Bit Static RAM
NEe Microcomputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI. PD2114L·5 DESCRIPTION 4098 BIT (1024 )( 4 BITS) STATIC RAM The NE.
NEC
UPD2114L-1 - 4K-Bit Static RAM
NEe Microcomputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI. PD2114L·5 DESCRIPTION 4098 BIT (1024 )( 4 BITS) STATIC RAM The NE.
NEC
UPD2114L - 4K-Bit Static RAM
NEe Microcomputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI. PD2114L·5 DESCRIPTION 4098 BIT (1024 )( 4 BITS) STATIC RAM The NE.
Intel
D2114 - (D2114 / D2115) RAM
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Leshan Radio Company
L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KVLT3G - NPN silicon transistor
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.
Leshan Radio Company
L2SD2114KWLT3G - NPN silicon transistor
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.
SeCoS
2SD2114 - NPN Transistor
Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.
Kexin
2SD2114K - Power Transistor
SMD Type TransistIoCrs Power Transistor 2SD2114K Features High DC current gain. High emitter-base voltage. Low VCE (sat). +0.12.4 -0.1 SOT-23 2.9.
Rohm
2SD2114K - High-current Gain Medium Power Transistor
2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba.
CYStech
BTD2114N3 - High Current Gain Medium Power NPN Epitaxial Planar Transistor
CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Ep.
JCST
2SD2114 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR (NPN) FEATURES z High DC current gain. z.
SEMTECH
MMBTSD2114 - NPN Transistor
MMBTSD2114 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage E.
