DMOS-FET Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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TN2640 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switch

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Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold - 2.0V max. ►► High input impedance ►► Low input capaci

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOL

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polyfet rf devices LC801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS ABS

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds

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polyfet rf devices LX401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for M

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TP2104 P-Channel Enhancement-Mode Vertical DMOS FET Features • High Input Impedance and High Gain • Low-Power Drive Requirement • Ease of Parallelin

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2N7105 SERIES N-Channel Lateral DMOS FETs The 2N7105 Series of single-pole, single-throw analog switches is designed for high speed switching in audio

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►►Free from secondary breakdown ►►Low power drive

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TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features ► Low threshold ► High input impedance ► Low input capacitance ► Fast switching speeds

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