DMOS-FET Datasheet | Specifications & PDF Download

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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MX0525 LDMOS TRANSISTOR 250W, 28V High Power RF LDMOS FETs Description The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide

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polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P124 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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MX0514 LDMOS TRANSISTOR Document Number: MX0514 Product Datasheet V1.0 140W, 28V High Power RF LDMOS FETs Description The MX0514 is a 140-watt capab

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DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE55

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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MIC4420/4429 Micrel, Inc. MIC4420/4429 6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description MIC4420, MIC4429 and MIC429 MOSF

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MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs Description The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET,

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MX0560VPX LDMOS TRANSISTOR 550W, 50V High Power RF LDMOS FETs Description The MX0560VPX is a 550-watt capable, high performance, unmatched LDMOS FET,

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MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wi

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polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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