Document 139-1 Output Power Chokes – Toroid Styl.
DIODES
DMT10H010SPS - 100V N-CHANNEL MOSFET
Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V ID TC = +25°C 113A 98A Green DMT10H010SPS 100V N-CHANNEL ENHANCEMENT .
DIODES
DMT10H015SK3 - 100V N-CHANNEL MOSFET
ADVANCED INFORMATION Green DMT10H015SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 14mΩ @ VGS = 10V 20mΩ @ VG.
Diodes
DMT10H015LK3 - 100V N-CHANNEL MOSFET
Green DMT10H015LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ @ VGS = 10V 18mΩ @ VGS = 6V ID TC = +25°C 52.
Coilcraft
DMT1 - Output Power Chokes
Document 139-1 Output Power Chokes – Toroid Styles The DMT power inductors are designed primarily for use as output chokes in switching power supplie.
SICK
DMT10-2-1113 - LONG RANGE DISTANCE SENSORS
ONLINE DATA SHEET DMT10-2-1113 DMT LONG RANGE DISTANCE SENSORS A B C D E F H I J K L M N O P Q R S T DMT10-2-1113 | DMT LONG RANGE DISTANCE SENSORS.
Diodes
DMT10H010LCT - N-CHANNEL MOSFET
Green DMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 9.5mΩ @VGS = 10V Package TO220AB ID TC = +25°C 98A.
Diodes
DMT10H010LSS - N-CHANNEL MOSFET
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5m.
Diodes
DMT10H015LPS - N-CHANNEL MOSFET
ADVANCED INFORMATION Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features V(BR)DSS 100V RDS(ON) Max 16mΩ @ .
INCHANGE
DMT10H010LCT - N-Channel MOSFET
isc N-Channel MOSFET Transistor DMT10H010LCT FEATURES ·Drain Current –ID= 98A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source .
DIODES
DMT10H010LSSQ - 100V N-CHANNEL MOSFET
DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .
DIODES
DMT10H009LCG - 100V N-Channel MOSFET
DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V ID TC = +25°C 47A.
DIODES
DMT10H009LPS - 100V N-CHANNEL MOSFET
Product Summary Green DMT10H009LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features BVDSS 100V RDS(ON) Max 8mΩ @ VGS = 10V 12.5mΩ @.
LRC
S-L2N7002DMT1G - Small Signal MOSFET
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC–74 L2N7002DMT1G S-L2N7002DMT1G • We declare that the material of pr.
SICK
DMT10-2-1111 - LONG RANGE DISTANCE SENSORS
ONLINE DATA SHEET DMT10-2-1111 DMT LONG RANGE DISTANCE SENSORS A B C D E F H I J K L M N O P Q R S T DMT10-2-1111 | DMT LONG RANGE DISTANCE SENSORS.
SICK
DMT10-2-2211 - LONG RANGE DISTANCE SENSORS
ONLINE DATA SHEET DMT10-2-2211 DMT LONG RANGE DISTANCE SENSORS A B C D E F H I J K L M N O P Q R S T DMT10-2-2211 | DMT LONG RANGE DISTANCE SENSORS.
Diodes
DMT10H010LK3 - 100V N-CHANNEL MOSFET
Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V ID TC = +25°C 68.8A 60.7A Green DMT10H010LK3 100V N-CHANNEL ENHANCEME.
Diodes
DMT10H010LPS - N-CHANNEL MOSFET
ADVANCED INFORMATION Product Summary Green DMT10H010LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features BVDSS 100V RDS(ON) Max 8.3mΩ @ VGS.
Diodes
DMT10H015LFG - N-CHANNEL MOSFET
NEW PRODUCT Green DMT10H015LFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 13.5mΩ @ VGS = 10V 18mΩ @ VGS = 6..
Diodes
DMT10H015LSS - N-CHANNEL MOSFET
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) Max 1.
Diodes
DMT10H015LCG - 100V N-CHANNEL MOSFET
DMT10H015LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V ID Max TC = +25°C 34.