Driver-GaN Datasheet | Specifications & PDF Download

TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver Features Description • AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Sup

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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GaN QR BP87618 BP87618 X 650V GaN 60~120W BP87618 COT Adaptive COT mW 150 V BP87618 LPS CS / VCC / BP87618 ESOP-10 30 Brown-in/out

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MPQ1918 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver, AEC-Q100 Qualified DESCRIPTION The MPQ1918 is designed to drive enhancement mode Gallium

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMG1020 SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018 LMG1020

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MASTERGAN4 Datasheet High power density 600V half-bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN4 Product label Feat

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ISL71441SLH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL71441SLH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Dr

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® General Description Qorvo's TGA2597 is a driver amplifier fabricated on Qorvo's QGAN25 0.25 um GaN on SiC production process. The TGA2597 operates f

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ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL73041SEH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Dr

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ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride

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1EDI EiceDRIVER™ Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Data Sheet Rev. 2.0, 2015-06-01 Industrial Power Co

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Product Folder Order Now Technical Documents Tools & Software Support & Community LM5113 SNVS725I – JUNE 2011 – REVISED OCTOBER 2019 LM5113 80-V,

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TD99102 - Die Specifications UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz Product Specification Features • TID = 100 krad(Si) • SEL I

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1214GN-15E 15 Watts • 50 Volts • 4.5mS, 35% 1200–1400MHz E Class Earless Driver GaN Transistor – Key Features  1200-1400MHz • 15W Output Power • CW

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Product Folder Order Now Technical Documents Tools & Software Support & Community UCC27611 SLUSBA5F – DECEMBER 2012 – REVISED MARCH 2018 UCC27611

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LMG1205 SNOSD37B – MARCH 2017 – REVISED APRIL 2023 LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode 1 Features • I

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1011GN-125E/EL/EP 125 Watts • 50 Volts • 128us, 10% 1030-1090MHz E Class Earless Driver GaN Transistor – Key Features  1030-1090MHz • 125W Pulsed Ou

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General description The MX1025D is a single channel low-side enhancementmode GaN FET and logic-level MOSFET driver for high switching frequency applic

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QPA2225D ® 28 – 38 GHz 0.4 Watt GaN Driver Amplifier Product Overview Qorvo’s QPA2225D is a wide band MMIC driver amplifier fabricated on Qorvo’s p

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