Dual-MOSFET Datasheet | Specifications & PDF Download

Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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Dual P - Channel Enhancement Mode Field Effect Transistor 4953 4953 DATASHEET P R ODUC T S UMMAR Y VDS S -30V ID -5.3A R DS (ON) ( m Ω ) Typ 50 @

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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UMW AO4828 60V Dual N-ChanneI MOSFET 1.Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera

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UMW IRF7342TR Dual P-Channel MOSFET 1.Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and

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Dual N-Channel Trench Power MOSFET General Description The+0 ' uses advanced trench technology to provide excellent RDS(ON), low gate charge and o

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F7304-VB F7304-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.035 at VGS = - 10 V 0.045 at VGS = - 4.

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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W241-VB W241-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VG

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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60V, 7A Dual N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS6010T2 uses advanced trench technology and design to provide excellent RDS(on) with low

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INTEGRATED CIRCUITS DIVISION Features • 1.5A Peak Output Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Operating Temperature R

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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LMN2730EX7F Rev. 1.0 20V Dual N-Channel MOSFETs Features ● 20V, 700mA, RDS(ON)=400mΩ@VGS=4.5V ● Fast switching ● Suit for 1.5V Gate Drive Applicatio

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SM7342EKKP Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 (ESD Protection) 30V/67A RDS(ON)=4.3mΩ(max.)@VGS=10V RDS(ON)=7.2mΩ(max.)@VGS=

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DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to

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UMW R UMW 8205A Dual N-Channel Enhancement Mode MOSFET FEATURES ·20V 5A N-channel Trench Mosfet ·RDSON≤27mΩ @Vgs=4.5V, Id=5A ·RDSON≤36mΩ @Vgs=2.5V,

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