Dual-MOSFET Datasheet | Specifications & PDF Download

Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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Dual P - Channel Enhancement Mode Field Effect Transistor 4953 4953 DATASHEET P R ODUC T S UMMAR Y VDS S -30V ID -5.3A R DS (ON) ( m Ω ) Typ 50 @

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AO4800 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) 6.

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INTEGRATED CIRCUITS DIVISION Features • 1.5A Peak Output Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Operating Temperature R

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CEM6338 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 5.2A, RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high

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APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Drive

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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DMG1023UVQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(on) 0.75Ω @ VGS = -4.5V 1.05Ω @ VGS = -2.5V ID TA = +25°C -1.03A

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DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to

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www.vishay.com SiZ980DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30

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REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF

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  AUTOMOTIVE GRADE AUIRF7303Q Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic

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CEM9939A Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -3

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HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate c

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