Dual-MOSFET Datasheet | Specifications & PDF Download

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description 5 / 5 / & % $ # , , , , -20V/-6A, RDS(ON)

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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Dual P - Channel Enhancement Mode Field Effect Transistor 4953 4953 DATASHEET P R ODUC T S UMMAR Y VDS S -30V ID -5.3A R DS (ON) ( m Ω ) Typ 50 @

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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AON6992 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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FDD8424H Dual N & P-Channel PowerTrench® MOSFET March 2007 FDD8424H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 24

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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AO4932 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4932 uses advanced trench technology to provide excellen

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transis

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www.vishay.com SiZ980DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30

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AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6912A is designed to provide a high efficiency synchronous

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APM4910K Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 30V/7A, RDS(ON) = 22mΩ (typ.) @ VGS = 10V R DS(ON) = 26mΩ (typ.) @ V G

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