E230 Datasheet | Specifications & PDF Download

GigaDevice Semiconductor Inc. GD32E230xx ARM® Cortex®-M23 32-bit MCU Datasheet Revision 2.6 (Apr. 2024) GD32E230xx Datasheet Table of Contents Table

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n-channel JFETs designed for • • • • Audio and Sub-Audio Amplifiers H Performance Curves NS See Section 4 BENEFITS • Ultra Low Noise en = 8 nV/y'HZ T

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NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are sili

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NTE2302 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Features: D High Breakdown Voltage and High Reliability D High Swi

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PE2302A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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  www.DataSheet4U.com                                                                                        ACE2302                              

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N-Channel Enhancement Mode Power MOSFET PE2306A Description D The PE2306A uses advanced trench technology to provide excellent RDS(ON), low gate

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PE2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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PE2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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PE2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera

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NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in

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ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field eff

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper

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PE2304A N-Channel Enhancement Mode Power MOSFET Description The PE2304A uses advanced trench technology to provide excellent RDS(ON) and low gate ch

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http://www.ncepower.com Pb Free Product NCE2301B NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301B uses advanced trench technolo

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