ER-D210 Datasheet | Specifications & PDF Download

FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V  +180V  +1.0A/-1.0A  3.3V/5V  VCC（UVLO）     100ns DC

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www.DataSheet4U.com MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technology

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FD2105 FD2105 FD2105 ，、 N MOSFET IGBT ，+40V 。 FD2105 VCC （UVLO）， ，。 FD2105 ， HO、LO 。 FD2105 ， 。 40V  +40V  ：3V~21V  ：+1.2A/-1.8A  3.3V/5

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HWD2108 Audio Power Amplifier Dual 105 mW Headphone Amplifier General Description Key Specifications The HWD2108 is a dual audio power amplifier c

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CONTELEC Singleturn Potentiometers PD200/210 ψ20.0mm 100,000 cycles Wirewound Features Immersion proof and washable Excellent resolution Good Linearit

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2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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www.fairchildsemi.com FSD210B, FSD200B Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • F

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www.fairchildsemi.com FSD210, FSD200 Features Green Mode Fairchild Power Switch (FPSTM) • Single Chip 700V Sense FET Power Switch • Precision Fixed

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MD2103 3W MD2103 Datasheet Version 1.0 ShenZhen ChipSourceTek Technology Co. ,Ltd. TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 Room 613,No

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2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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1 SD 210 FI www.DataSheet4U.com Data Sheet SCALE High Voltage IGBT Driver 1SD210FI-FZ600R65KF1 Plug-and-play, compact, high performance, single chan

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Description The DGD2104 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High

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2ED21091S06F 2ED21091S06F 650 V half bridge gate driver with integrated bootstrap diode Features • Unique Infineon Thin-Film-Silicon On Insulator (S

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www.DataSheet4U.com MD2103DFX High voltage NPN power transistor for standard definition CRT display General features ■ ■ ■ ■ ■ ■ ■ State-of-the-art

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2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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AOD210V60E 600V, a MOSE TM N-Channel Power Transistor General Description • Excellent RDS(ON)*A • Optimized switching parameters for better EMI perfo

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Dual 1:4, LVDS Output Fanout Buffer 8SLVD2104 DATA SHEET General Description The 8SLVD2104 is a high-performance differential dual 1:4 LVDS fanout

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 DESCRIPTION ·Collector-Emitter Breakdown Voltag

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