ET-20N50 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION The Nell 20N50 is a three-terminal

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N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg m

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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SVF20N50F/PN_Datasheet 20A 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor w

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UNISONIC TECHNOLOGIES CO., LTD 20N50 20A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced tech

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TSA20N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanc

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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SLF20N50C SLF20N50C 500V N-channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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SM20N50 500V N-Channel MOSFET TO-3P SM20N50 kongson Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe

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Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capabilit

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500V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Reco

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isc N-Channel MOSFET Transistor SIHG20N50C FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-

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SLP20N50C / SLF20N50C SLP20N50C / SLF20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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FDP20N50 / FDPF20N50 / FDPF20N50T — N-Channel UniFETTM MOSFET FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Novemb

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