ET-20N50 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION The Nell 20N50 is a three-terminal

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www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg m

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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HFA20N50U HFA20N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ V

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High Voltage MOSFET N-Channel, Depletion Mode IXTH20N50D IXTT20N50D VDSX = ID25 = ≤RDS(on) 500V 20A 330mΩ TO-268 (IXTT) Symbol VDSX VDGX VGSX VGS

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Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capabilit

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Preliminary Technical Information PolarP2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB120N50P2 VD

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HM20N50A HM20N50A 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. Th

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3

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500V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Reco

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3

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Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum J

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3

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