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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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EM5209 Dual Channel, Ultra-Low Resistance Load Switch General Description The EM5209 is a small, ultra-low RON, dual channel load switch with contro

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EM8569 HV Start-up Green-mode PWM Converter with Brown-Out Protection General Description EM8569 is a high performance, low cost, HV Start-up, curren

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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EM5201 Ultra-low Resistance with Quick Rising Time Load Switch General Description Applications The EM5201 is a small, ultra-low RON, single chann

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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Pyroelectric detectors for GAS MONITORING Pyrodetectors For Gas Monitoring And Measuring PYS 3228, PYS 3428 – Dual-Channel Pyros Applications • Gas

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A G UIS, Rg 100% Tested

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3A Low Dropout LDO EM5103 General Description EM5103 is a 3A low dropout linear regulator designed for low dropout and high current applications. T

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  9mΩ  ID  50A  G   UIS, Rg 100%

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.)

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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BBY 56-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tu

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