F630N Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω

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isc N-Channel MOSFET Transistor IRF630N，IIRF630N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed

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F630N-VB F630N-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.270 at VGS = 10 V ID (A) 10 T

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