FDD Datasheet | Specifications & PDF Download

FDD770N15A — N-Channel PowerTrench® MOSFET April 2015 FDD770N15A N-Channel PowerTrench® MOSFET 150 V, 18 A, 77 mΩ Features • RDS(on) = 61 mΩ ( Typ.

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FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced usi

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FDD8880 September 2004 FDD8880 N-Channel PowerTrench® MOSFET 30V, 58A, 9m Ω General Description This N-Channel MOSFET has been designed specifically

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1100 2.5-Inch and M.2 NAND Flash SSD Features 1100 2.5-Inch and M.2 SATA NAND Flash SSD MTFDDAK256TBN, MTFDDAK512TBN, MTFDDAK1T0TBN, MTFDDAK2T0TBN, MT

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December 1998 ML6673 Fast Ethernet/FDDI TP-PMD Transceiver GENERAL DESCRIPTION The ML6673 is a complete monolithic transceiver for 125 Mbaud MLT-3 en

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Integrated Circuit Systems, Inc. ICS1886 FDDI / Fast Ethernet PHYceiverTM General Description The ICS1886 is designed to provide high performance cl

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FDD8424H Dual N & P-Channel PowerTrench® MOSFET March 2007 FDD8424H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 24

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Features Datasheet RX71M Group Renesas MCUs R01DS0249EJ0100 Rev.1.00 240-MHz 32-bit RX MCU, on-chip FPU, 480 DMIPS, up to 4-MB flash memory, Jan

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FDD6630A FDD6630A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall

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MOSFET – N-Channel, POWERTRENCH) 30 V, 58 A, 9 mW FDD8880, FDD8880-G General Description This N−Channel MOSFET has been designed specifically to impr

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MOSFET, N-Channel, POWERTRENCH) 150 V, 21 A, 66 mW FDD2582 Features  rDS(ON) = 58 mW (Typ.), VGS = 10 V, ID = 7 A  Qg(tot) = 19 nC (Typ.), VGS = 10

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MOSFET – N-Channel, POWERTRENCH) 150 V, 14 A, 120 mW FDD120AN15A0 Features • RDS(on) = 101 mW (Typ.) @ VGS = 10 V, ID = 4 A • QG(tot) = 11.2 nC (Typ.

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+ MOSFET – P-Channel, POWERTRENCH) -40 V, -14 A, 44 mW FDD4243, FDD4243-G General Description This P−Channel MOSFET has been produced using onsemi’s

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FDD2582 N-Channel 150 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) 0.074 at VGS = 10 V 0.077 at VGS = 8 V ID (A)a 25.4 2

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FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V

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FDD9410_F085 N-Channel Power Trench® MOSFET October 2014 FDD9410_F085 N-Channel Power Trench® MOSFET 40 V, 50 A, 4.1 mΩ D Features „ Typ rDS(on)

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FDD2570 February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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FDD3570 February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed

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FDD3680 February 2001 FDD3680 100V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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FDD3682 FDD3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS =

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