FDS4435 October 2001 FDS4435 30V P-Channel Power.
FDS4435BZ - P-Channel PowerTrench MOSFET
FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -10V, ID = -.FDS4435 - P-Channel MOSFET
FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi.FDS4435A - P-Channel MOSFET
FDS4435A October 2001 FDS4435A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fa.4435BZ - FDS4435BZ
FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features Max rDS(.FDS4435BZ_F085 - P-Channel PowerTrench MOSFET
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.FDS4435BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro.FDS4435BZ-F085 - P-Channel Power MOSFET
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features Max rDS(on) = 20m: at VGS = -1.FDS4435BZ - P-Channel MOSFET
FDS4435BZ-NL FDS4435BZ-NL Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V .