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UMW FDV303N 25V N-ChanneI MOSFET 1.Features VDS(V)=25V ID=0.68A RDS(ON)<28mΩ(VGS=4.5V) RDS(ON)<42mΩ(VGS=2.7V) Compact industry standard SOT-23 surfac

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Through Hole Lamp Product Data Sheet LTW-42FDV6J-061A Spec No. :DS20-2018-0217 Effective Date: 05/08/2019 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001

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October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using

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NXP Semiconductors Data Sheet: Technical Data i.MX RT1170 Crossover Processors Data Sheet for Consumer Products Document Number: IMXRT1170CEC Rev. 5,

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NXP Semiconductors Data Sheet: Technical Data Document Number: IMXRT1060CEC Rev. 4, 04/2024 i.MX RT1060 Crossover Processors for Consumer Products

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Metal Alloy Inductors メタルアロイ®インダクタ FDV0618/FDV0620 Inductance Range: 0.24~3.3H (FDV0618), 0.2~4.7H (FDV0620) Recommended patterns パターン FDV0618 FD

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NXP Semiconductors Data Sheet: Technical Data Document Number: IMXRT1060CEC Rev. 4, 04/2024 i.MX RT1060 Crossover Processors for Consumer Products

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Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using

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Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s p

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Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using

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FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's

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August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's

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SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS =

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Fixed Inductors for Surface Mounting FDV0840 Inductance Range: 0.26 12μH DIMENSIONS Recommended patterns Tolerance 0.3 (Unit: mm) (Unit: mm) FEAT

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FDV305N January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTren

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FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietar

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