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Fairchild Semiconductor
FDV303N - N-Channel Digital FET
FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietar.
TOKO
FDVE1040 - Metal Alloy Inductors
Metal Alloy Inductors メタルアロイ®インダクタ FDVE1040 Inductance Range: 1.5～10H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES .
TOKO
FDVE0630 - Metal Alloy Inductors
Metal Alloy Inductors メタルアロイ®インダクタ FDVE0630 Inductance Range: 0.16H～10H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES .
TOKO
FDVE0640 - Metal Alloy Inductors
Fixed Inductors for Surface Mounting FDVE0640 Inductance Range: 3.3μH DIMENSIONS Recommended patterns 3.5 FEATURES • 7.4 × 6.7mm square and 4.0mm .
TOKO
FDV0840 - Metal Alloy Inductors
Fixed Inductors for Surface Mounting FDV0840 Inductance Range: 0.26 12μH DIMENSIONS Recommended patterns Tolerance 0.3 (Unit: mm) (Unit: mm) FEAT.
Fairchild Semiconductor
FDV301N - N-Channel Digital FET
FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's .
TOKO
FDV0530 - Metal Alloy Inductors
Metal Alloy Inductors メタルアロイ®インダクタ FDV0530 Inductance Range: 0.11~4.7H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES .
TOKO
FDV0618 - Metal Alloy Inductors
Metal Alloy Inductors メタルアロイ®インダクタ FDV0618/FDV0620 Inductance Range: 0.24~3.3H (FDV0618), 0.2~4.7H (FDV0620) Recommended patterns パターン FDV0618 FD.
TOKO
FDV0620 - Metal Alloy Inductors
Metal Alloy Inductors メタルアロイ®インダクタ FDV0618/FDV0620 Inductance Range: 0.24~3.3H (FDV0618), 0.2~4.7H (FDV0620) Recommended patterns パターン FDV0618 FD.
Fairchild Semiconductor
FDV302P - Digital FET/ P-Channel
October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using.
Fairchild Semiconductor
FDV304P - Digital FET/ P-Channel
August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's.
Fairchild Semiconductor
FDV305N - 20V N-Channel MOSFET
FDV305N January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTren.
TOKO
FDV0630 - Fixed Inductors
Fixed Inductors for Surface Mounting FDV0630 Inductance Range: 0.2~4.7µH DIMENSIONS Recommended patterns 7.4 3.0 Max. 1.4 (4.6) 1.4 6.7 3.2 .
Premo
FDC-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter
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Premo
FD-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter
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Premo
FDV-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter
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ON Semiconductor
FDV301N - N-Channel Digital FET
Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using.
Kexin
FDV301N - N-Channel MOSFET
N-Channel MOSFET FDV301N SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.
CREE
XPGDWT-U1-0000-00FDV - LED
CLD-DS139 REV 3A Cree® XLamp® XP-G3 LEDs PRODUCT FAMILY DATA SHEET XP-G3 White XP-G3 Royal Blue XP-G3 Photo Red PRODUCT DESCRIPTION XLamp® XP-G3.
Kexin
FDV303N - N-Channel MOSFET
SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS =.
