FDV Datasheet | Specifications & PDF Download

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October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using

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SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS =

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FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's

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FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietar

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Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s p

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Metal Alloy Inductors メタルアロイ®インダクタ FDV0618/FDV0620 Inductance Range: 0.24~3.3H (FDV0618), 0.2~4.7H (FDV0620) Recommended patterns パターン FDV0618 FD

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Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using

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Fixed Inductors for Surface Mounting FDV0840 Inductance Range: 0.26 12μH DIMENSIONS Recommended patterns Tolerance 0.3 (Unit: mm) (Unit: mm) FEAT

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FDV305N January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTren

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Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using

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N-Channel MOSFET FDV301N SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0

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Fixed Inductors for Surface Mounting FDVE0640 Inductance Range: 3.3μH DIMENSIONS Recommended patterns 3.5 FEATURES • 7.4 × 6.7mm square and 4.0mm

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Fixed Inductors for Surface Mounting FDV0630 Inductance Range: 0.2~4.7µH DIMENSIONS Recommended patterns 7.4 3.0 Max. 1.4 (4.6) 1.4 6.7 3.2

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Metal Alloy Inductors メタルアロイ®インダクタ FDVE1040 Inductance Range: 1.5～10H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES 

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Metal Alloy Inductors メタルアロイ®インダクタ FDVE0630 Inductance Range: 0.16H～10H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES

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August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's

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