VISHAY Standard Sinterglass Diode G2A / B / D / G.
ESMT
F50D1G41LB-66YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.
General Electric
G2M - GLASS PASSIVATED JUNCTION RECTIFIER
G2A THRU G2M GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes * DO-204AP TED TEN PA 0.034 (0..
ESMT
M14D5121632A-1.8BBG2M - DDR-II SDRAM
ESMT (Preliminary) M14D5121632A (2M) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1.
ESMT
F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
ESMT
F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
ESMT
F50D1G41LB-50YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.
ESMT
F50L2G41LB-50YG2ME - 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Co.
Hynix Semiconductor
HY27UG082G2M - (HY27xx Series) 2G-Bit NAND Flash
Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History w w w .D 0.0 at h S a t e e 4U . m o c Preliminary HY27UG.
Hynix Semiconductor
HY27SG162G2M - (HY27xx Series) 2G-Bit NAND Flash
Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History w w w .D 0.0 at h S a t e e 4U . m o c Preliminary HY27UG.
Hynix Semiconductor
HY27UG084G2M - (HY27UGxx Series) 2G-Bit NAND Flash
w e e Document h Title S / 256Mx16bit) NAND Flash Memory 4Gbit (512Mx8bit a at .D History Revision w w Revision No. 0.0 U 4 t . m o c Preliminary.
Hynix Semiconductor
HY27UF082G2M - (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit /.
Hynix Semiconductor
HY27UF084G2M - 4Gbit (512K x 8-Bit) NAND Flash
( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a gen.
ESMT
F59D1G81MB-45BG2M - 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
M12L64164A-5BG2M - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M12L64164A-7BG2M - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M14D5121632A-1.8BG2M - DDR-II SDRAM
ESMT (Preliminary) M14D5121632A (2M) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1.
ESMT
F59D1G81MB-45BUG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G81LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59L1G81LB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.