GA200 Datasheet | Specifications & PDF Download

February 2010 Includes High- Performance, Low-Cost “E-Series” ispXPGA® Family Data Sheet DS1026 DISSECLOENCTTINDUEEVIDCES  Non-volatile, Infinite

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www.DataSheet.co.kr Bulletin I27222 03/06 GA200HS60S1 HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: optimiz

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www.DataSheet.co.kr Bulletin I27121 rev. B 07/02 GA200HS60S HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: o

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PD- 50070A /) 5)$ 5 INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies

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GA200-GA201A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (hig

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www.DataSheet.co.kr GA200HS60S1PbF Vishay High Power Products Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A FEATURES • Generation 4 IGBT

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GA200-GA201A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (hig

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www.DataSheet4U.com Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation volta

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February 2010 Includes High- Performance, Low-Cost “E-Series” ispXPGA® Family Data Sheet DS1026 DISSECLOENCTTINDUEEVIDCES  Non-volatile, Infinite

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PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up t

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PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A HALF-BRIDGE IGBT INT-A-PAK Featur

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification Supersedes data of 1999 Jul 23 1999 Aug 11 Philips S

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www.DataSheet.co.kr PD -94347 GA200NS61U IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencie

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www.DataSheet.co.kr GA200TS60UPbF Vishay High Power Products Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2003 Silicon MMIC amplifier Product specification Supersedes data of 1999 Feb 25 1999 Jul 23 Philips S

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www.DataSheet.co.kr Bulletin I27221 03/06 GA200TS60UX HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized fo

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PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A HALF-BRIDGE IGBT DOUBLE INT-A-P

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www.vishay.com VS-GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A SOT-227 PRIMARY CHARACTERISTIC

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Topstek Current Transducers TEGA40A .. TEGA600A TEGA 40A~600A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast respon

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www.vishay.com VS-GA200HS60S1PbF Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A INT-A-PAK PRIMARY CHARACTERISTICS

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