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GH6 Datasheet | Specifications & PDF Download

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GH6 Make Only Load Switching

GH2: No Load Switching - GH4: Make & Break Load Sw.

ON Semiconductor Logo
FGH60N60 (ON Semiconductor) - IGBT
IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati
(47 views)
13-070XILB0GH6-S (DigiWise) - LCD
DigiWise DigiWise International Corporation www.digiwise.asia E-mail: sales@digiwise.asia TFT Module Specification MODEL: 13-070XILB0GH6-S  ◇  P
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IXYS Logo
IXGH6N170 (IXYS) - High Voltage IGBT
High Voltage IGBT IXGT6N170 IXGH6N170 VCES = IC90 = VCE(sat) tfi(typ)  = 1700V 6A 4.0V 290ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (
(20 views)
IXYS Logo
IXGH60N30C3 (IXYS) - High Speed IGBT
Advance Technical Information GenX3TM 300V IGBT IXGH60N30C3 High Speed IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi typ 300
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Cree Logo
CGH60030D (Cree) - GaN HEMT Die
CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior propertie
(18 views)
IXYS Corporation Logo
IXGH60N60B2 (IXYS Corporation) - IGBT
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B
(17 views)
ON Semiconductor Logo
FGH60N60SFD (ON Semiconductor) - IGBT
IGBT - Field Stop 600 V, 60 A FGH60N60SFD Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum pe
(16 views)
ON Semiconductor Logo
FGH60N60SMD (ON Semiconductor) - IGBT
IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati
(16 views)
Topstek Logo
TGH6A (Topstek) - Current Transducers
Topstek Current Transducer TGH3A .. TGH50A TGH 3A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time
(15 views)
Cree Logo
CGH60015D (Cree) - GaN HEMT Die
CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properti
(15 views)

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