CGH60015D

GaN HEMT Die

Cree

CGH60015D Features

* APPLICATIONS

* 15 dB Typical Small Signal Gain at 4 GHz

* 12 dB Typical Small Signal Gain at 6 GHz

* 15 W Typical PSAT

* 28 V Operation

* High Breakdown Voltage

* High Temperature Operation

* Up to 6 GHz Operation

* High Effic

CGH60015D Datasheet (427.03 KB)

CGH60015D Datasheet Preview — Preview of CGH60015D PDF

Datasheet Details

Part number:

CGH60015D

Manufacturer:

Cree

File Size:

427.03 KB

Description:

Gan hemt die.
CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properti.

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CGH60015D GaN HEMT Die Cree

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CGH60015D Features

Datasheet Details

File Size:

Description:

CGH60015D Distributor