CGH60030D

GaN HEMT Die

Cree

CGH60030D Features

* APPLICATIONS

* 15 dB Typical Small Signal Gain at 4 GHz

* 12 dB Typical Small Signal Gain at 6 GHz

* 30 W Typical PSAT

* 28 V Operation

* High Breakdown Voltage

* High Temperature Operation

* Up to 6 GHz Operation

* High Effic

CGH60030D Datasheet (501.62 KB)

CGH60030D Datasheet Preview — Preview of CGH60030D PDF

Datasheet Details

Part number:

CGH60030D

Manufacturer:

Cree

File Size:

501.62 KB

Description:

Gan hemt die.
CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior propertie.

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TAGS

CGH60030D GaN HEMT Die Cree

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CGH60030D Features

Datasheet Details

File Size:

Description:

CGH60030D Distributor