CGH60030D GaN HEMT Die

Cree

Description

CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).GaN has superior propertie.

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CGH60030D Datasheet Preview — Preview of CGH60030D PDF

Datasheet Specifications

Part number: CGH60030D
Manufacturer: Cree
File Size: 501.62 KB
Datasheet: CGH60030D-Cree.pdf
Description: GaN HEMT Die

Applications

* 15 dB Typical Small Signal Gain at 4 GHz
* 12 dB Typical Small Signal Gain at 6 GHz
* 30 W Typical PSAT
* 28 V Operation
* High Breakdown Voltage
* High Temperature Operation
* Up to 6 GHz Operation
* High Efficiency

CGH60030D Distributors

📁 Related Datasheet

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CGH60030D GaN HEMT Die Cree

Cree CGH60030D-like datasheet