HPD Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET HPD600R700DN ○R General Description： HPD600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET ○R HPD800R900PD-G General Description： HPD800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPD650R420PC-G General Description： HPD650R420PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Four Character Smart Alphanumeric Displays Technical Data HPDL-1414 Features • Smart Alphanumeric Display Built-in RAM, ASCII Decoder and LED Drive

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Silicon N-Channel Power MOSFET ○R HPD650R300PC-G General Description： HPD650R300PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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NHPD660, NRVHPD660 Switch Mode Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supp

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Silicon N-Channel Power MOSFET ○R HPD700R450PC-G General Description： HPD700R450PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPD800R750PD-G General Description： HPD800R750PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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HPD (HYBRID PHOTO-DETECTOR) MODULES PRELIMINARY DATA OCT. 2000 H8236-07, -40 PATENT PENDING The HPD (Hybrid Photo-Detector) is a new vacuum photo-de

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Silicon N-Channel Power MOSFET HPD650R1K1DN ○R General Description： HPD650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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NHPD660, NRVHPD660 Switch Mode Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supp

(8 views)

Silicon N-Channel Power MOSFET ○R HPD800R450PD-G General Description： HPD800R450PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPD700R320PC-G General Description： HPD700R320PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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RAA2900014H12HPD INTELLIGENT POWER DEVICE Datasheet R07DS1266EJ0101 Rev.1.01 Feb. 28, 2020 1. Overview 1.1 Description RAA290001 is designed for 2 W

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Silicon N-Channel Power MOSFET ○R HPD650R650PC-G General Description： HPD650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPD700R700PC-G General Description： HPD700R700PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPD600R280PC-G General Description： HPD600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET HPD600R2K3DN ○R General Description： HPD600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPD650R600SA ○R General Description： HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET HPD650R1K9DN ○R General Description： HPD650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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