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HPD800R900PD-G

Silicon N-Channel Power MOSFET

HPD800R900PD-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications： Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 V

HPD800R900PD-G General Description

HPD800R900PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD800R900PD-G Datasheet (440.89 KB)

Preview of HPD800R900PD-G PDF

Datasheet Details

Part number:

HPD800R900PD-G

Manufacturer:

CR Micro

File Size:

440.89 KB

Description:

Silicon n-channel power mosfet.

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TAGS

HPD800R900PD-G Silicon N-Channel Power MOSFET CR Micro

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