HPD700R1K3SA Datasheet (HUAJING MICROELECTRONICS) - Silicon N-Channel Power MOSFET

HPD700R1K3SA, Silicon N-Channel Power MOSFET

HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher e

HPD700R1K3SA Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID