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HPD700R1K3SA

Silicon N-Channel Power MOSFET

HPD700R1K3SA Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID

HPD700R1K3SA General Description

HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

HPD700R1K3SA Datasheet (422.67 KB)

Preview of HPD700R1K3SA PDF

Datasheet Details

Part number:

HPD700R1K3SA

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

422.67 KB

Description:

Silicon n-channel power mosfet.

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HPD700R1K3SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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