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HPD650R300PC-G

Silicon N-Channel Power MOSFET

HPD650R300PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 15 A 206 W 0.24 Ω 2.4 uJ Applications： Power switch circuit of adaptor ,PC and LED power. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter

HPD650R300PC-G General Description

HPD650R300PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD650R300PC-G Datasheet (525.00 KB)

Preview of HPD650R300PC-G PDF

Datasheet Details

Part number:

HPD650R300PC-G

Manufacturer:

CR Micro

File Size:

525.00 KB

Description:

Silicon n-channel power mosfet.

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HPD650R300PC-G Silicon N-Channel Power MOSFET CR Micro

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