HPD600R2K3DN - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

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Datasheet Details

Part number: HPD600R2K3DN
Manufacturer: HUAJING MICROELECTRONICS
File Size: 469.21 KB
Datasheet: HPD600R2K3DN-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

HPD600R2K3DN Product details

Description

HPD600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard..

Features

l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test.

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Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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