HPD600R2K3DN Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET HPD600R2K3DN ○R General .
HPD600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: HPD600R2K3DN
Manufacturer: HUAJING MICROELECTRONICS
File Size: 469.21 KB
Datasheet: HPD600R2K3DN-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

HPD600R2K3DN Distributors

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HPD600R2K3DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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