HPD600R2K3DN Datasheet - HUAJING MICROELECTRONICS

HPD600R2K3DN Silicon N-Channel Power MOSFET

HPD600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPD600R2K3DN Features

* l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifi

HPD600R2K3DN-HUAJINGMICROELECTRONICS.pdf