HPD600R380PC-G Datasheet - CR Micro

HPD600R380PC-G - Silicon N-Channel Power MOSFET

HPD600R380PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD600R380PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 11 A 85 W 0.35 Ω 1.4 uJ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS

HPD600R380PC-G-CRMicro.pdf

HPD600R380PC-G Datasheet Preview — Preview of HPD600R380PC-G PDF

Datasheet Details

Part number:

HPD600R380PC-G

Manufacturer:

CR Micro

File Size:

464.41 KB

Description:

Silicon n-channel power mosfet.

HPD600R380PC-G Distributor

📁 Related Datasheet

HPD600R280PC-G HPD600R2K3DN HPD600R600PC-G HPD600R700DN HPD650R1K1DN HPD650R1K9DN

📌 All Tags

HPD600R380PC-G Silicon N-Channel Power MOSFET CR Micro