HPD600R600PC-G Datasheet - CR Micro

HPD600R600PC-G Silicon N-Channel Power MOSFET

HPD600R600PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD600R600PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 8 A 95 W 0.53 Ω 1.2 uJ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS I

HPD600R600PC-G-CRMicro.pdf