HPD600R280PC-G Datasheet - CR Micro

HPD600R280PC-G Silicon N-Channel Power MOSFET

HPD600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD600R280PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 15 A 206 W 0.22 Ω 2.4 uJ Applications： Power switch circuit of adaptor ,PC and LED power. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter

HPD600R280PC-G Datasheet (523.57 KB)