HPD650R600SA Datasheet - HUAJING MICROELECTRONICS

HPD650R600SA Silicon N-Channel Power MOSFET

HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

HPD650R600SA Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.52 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，

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