HPD650R600SA Datasheet - HUAJING MICROELECTRONICS

HPD650R600SA - Silicon N-Channel Power MOSFET

HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

HPD650R600SA Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.52 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，

HPD650R600SA-HUAJINGMICROELECTRONICS.pdf

HPD650R600SA Datasheet Preview — Preview of HPD650R600SA PDF

Datasheet Details

Part number:

HPD650R600SA

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

349.65 KB

Description:

Silicon n-channel power mosfet.

HPD650R600SA Distributor

📁 Related Datasheet

HPD650R650PC-G HPD650R1K1DN HPD650R1K9DN HPD650R300PC-G HPD650R420PC-G HPD600R280PC-G

📌 All Tags

HPD650R600SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS