HPD650R600SA Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET HPD650R600SA ○R General .
HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.

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Datasheet Specifications

Part number: HPD650R600SA
Manufacturer: HUAJING MICROELECTRONICS
File Size: 349.65 KB
Datasheet: HPD650R600SA-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.52 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche En

HPD650R600SA Distributors

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HPD650R600SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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