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HPD650R650PC-G

Silicon N-Channel Power MOSFET

HPD650R650PC-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 8 A 95 W 0.55 Ω 1.2 uJ Applications: Power switch circuit of adaptor and charger. Absolute(Tj= 25℃ unless otherwise specified): Symbol Parameter VDSS I

HPD650R650PC-G General Description

HPD650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPD650R650PC-G Datasheet (463.32 KB)

Preview of HPD650R650PC-G PDF

Datasheet Details

Part number:

HPD650R650PC-G

Manufacturer:

CR Micro

File Size:

463.32 KB

Description:

Silicon n-channel power mosfet.

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HPD650R650PC-G Silicon N-Channel Power MOSFET CR Micro

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