HawYang
HY510N - PC POWER SUPPLY SUPERVISOR
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HY510N
PC POWER SUPPLY SUPERVISOR
Data Sheet
REV. 1.30 September 21, 2004
The information in this document is subject to change wit
(90 views)
HOOYI
HY5012W - N-Channel Enhancement Mode MOSFET
HY5012W/A
N-Channel Enhancement Mode MOSFET
Features
• 125V/300A
RDS(ON)=2.9 m (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged • Lead Fr
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HOOYI
HY5608W - N-Channel Enhancement Mode MOSFET
HY5608W/A
N-Channel Enhancement Mode MOSFET
Features
• 80V/360A
RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le
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HY5S7B2LFP-H - 512M (16Mx32bit) Mobile SDRAM
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LEM
HY50-P - Current Transducer HY 50-P
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HOOYI
HY5012A - N-Channel Enhancement Mode MOSFET
HY5012W/A
N-Channel Enhancement Mode MOSFET
Features
• 125V/300A
RDS(ON)=2.9 m (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged • Lead Fr
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Hynix Semiconductor
HY5S7B2LF-H - 512M (16Mx32bit) Mobile SDRAM
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HY57V641620FTP - Synchronous DRAM Memory 64Mbit
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No. 0.1 History Initi
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HY57V641620STP - Synchronous DRAM Memory 64Mbit
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
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Hynix Semiconductor
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG
4 Banks x 1M x 16Bit Synchronous DRAM
D E S C R IP T IO N
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui
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Hynix Semiconductor
HY5RS123235BFP - 512Mbit GDDR3 SDRAM
HY5RS123235BFP
512Mbit (16Mx32) GDDR3 SDRAM
HY5RS123235BFP
This document is a general product description and is subject to change without notice. Hy
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www.DataSheet4U.com
HY5117800C,HY5116800C
2Mx8, Fast Page mode
DESCRIPTION
This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configur
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HY5116404B - Extended Data Out Mode DRAM
www.DataSheet4U.com
DataSheet4U.com
DataShee
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DataSheet 4 U .com
www.DataSheet4U.com
et4U.com
DataSheet4U.com
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DataShe
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HY5116404C - Extended Data Out Mode DRAM
www.DataSheet4U.com
HY5117404C,HY5116404C
4Mx4, Extended Data Out mode
DESCRIPTION
This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit
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Hyundai Electronics
HY5117404A - 4M x 4-Bit CMOS DRAM
www.DataSheet4U.com
DataSheet4U.com
DataShee
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DataSheet 4 U .com
www.DataSheet4U.com
et4U.com
DataSheet4U.com
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HY5116164B - Extended Data Out mode
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http:/
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HY5W6B6DLF - 4 Bank x 1 M x 16 Bit Synchronous DRAM
Preliminary HY5W6B6DLF(P)-xE 4Banks x1M x 16bits Synchronous DRAM Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No. 0
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