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HY5-P Datasheet | Specifications & PDF Download

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HY5-P Current Transducers HY 5 to 25-P

Current Transducers HY 5 to 25-P For the electroni.

HOOYI

HY5012W - N-Channel Enhancement Mode MOSFET

HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.
Rating: 1 (5 votes)
Hyundai Electronics

HY5117804B - (HY5116804B / HY5117804B) Extended Data Out Mode

www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe.
Rating: 1 (5 votes)
HawYang

HY510N - PC POWER SUPPLY SUPERVISOR

¯E¶§¦³--¤½¥q ` HY510N PC POWER SUPPLY SUPERVISOR Data Sheet REV. 1.30 September 21, 2004 The information in this document is subject to change wit.
Rating: 1 (5 votes)
HOOYI

HY5608W - N-Channel Enhancement Mode MOSFET

HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
Rating: 1 (5 votes)
LEM

HY50P - Current Transducers/ HY 50-P/SP1

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Rating: 1 (4 votes)
Hynix Semiconductor

HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous .
Rating: 1 (4 votes)
HOOYI

HY5012A - N-Channel Enhancement Mode MOSFET

HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.
Rating: 1 (4 votes)
Hynix Semiconductor

HY5DU12422C - 512 Mb DDR SDRAM

512Mb DDR SDRAM HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without n.
Rating: 1 (4 votes)
Hyundai Electronics

HY5117404C - (HY5116404C / HY5117404C) Extended Data Out Mode

www.DataSheet4U.com HY5117404C,HY5116404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit .
Rating: 1 (4 votes)
Hynix Semiconductor

HY5V26CSF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM

www.DataSheet4U.com HY5V26C(L/S)F 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION Preliminary The Hynix HY5V26C(L/S)F is a 134,217,728bit CMOS Sy.
Rating: 1 (4 votes)
hytek

HY5640 - Subminiature Controller

HY5640 TEC Controller Subminiature Controller for Thermoelectric Coolers The HY5640 is a subminiature temperature controller for thermoelectric cooler.
Rating: 1 (4 votes)
Hyundai Electronics

HY512264 - Extended Data Out mode 4M bit dynamic RAM

HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. Th.
Rating: 1 (4 votes)
Hyundai

HY51C4256 - 256K x 4-Bit CMOS DRAM

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Rating: 1 (4 votes)
HOOYI

HY5608A - N-Channel Enhancement Mode MOSFET

HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
Rating: 1 (4 votes)
XINLEIFENG

HY5JA88-1010101 - Jack

SPECIFICATION FOR APPROVAL CUSTOMERS: YOUR COMCODE: DATE: DESCRIPTION: MODEL NO: REF.NO.: 2009917 RJ45 JACK HY5JA88-1010101 APPROVAL BY M.
Rating: 1 (3 votes)
LEM

HY5-P - Current Transducers HY 5 to 25-P

Current Transducers HY 5 to 25-P For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary cir.
Rating: 1 (3 votes)
LEM

HY50-P - Current Transducer HY 50-P

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Rating: 1 (3 votes)
Hynix Semiconductor

HY534256AJ - 256K x 4-bit CMOS DRAM

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Rating: 1 (3 votes)
Hynix Semiconductor

HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suite.
Rating: 1 (3 votes)
Hynix Semiconductor

HY5DV641622AT - 64M(4Mx16) DDR SDRAM

HY5DV641622AT 64M(4Mx16) DDR SDRAM HY5DV641622AT This document is a general product description and is subject to change without notice. Hynix Elect.
Rating: 1 (3 votes)
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