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INCHANGE 2N6 Datasheet, Features, Application

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Inchange Semiconductor

12N65 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Volta.
2.0 · rating-2rating-2
Inchange Semiconductor

2N6666 - Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(.
1.0 · rating-1
INCHANGE

JCS2N60F - N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche .
1.0 · rating-1
Inchange Semiconductor

12N60 - N-Channel MOSFET

isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re.
1.0 · rating-1
Inchange Semiconductor

2N6099 - Silicon NPN Power Transistors

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ¡¤With TO-220 package ¡¤High cu.
1.0 · rating-1
INCHANGE

IXFH22N65X2 - N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested.
1.0 · rating-1
Inchange Semiconductor

2N6213 - Silicon PNP Power Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-.
1.0 · rating-1
Inchange Semiconductor

2N6490 - Silicon PNP Power Transistors

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe opera.
1.0 · rating-1
Inchange Semiconductor

2N6770 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6770 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switch.
1.0 · rating-1
Inchange Semiconductor

2N6756 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6756 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switch.
1.0 · rating-1
Inchange Semiconductor

2N65 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.
1.0 · rating-1
Inchange Semiconductor

2N6052 - Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain.
1.0 · rating-1
Inchange Semiconductor

2N6057 - Silicon NPN Power Transistors

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resi.
1.0 · rating-1
INCHANGE

2N6357 - NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·1.
1.0 · rating-1
INCHANGE

2N6394 - Thyristor

isc Thyristors 2N6394 DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater paramet.
1.0 · rating-1
INCHANGE

2N6399 - Thyristor

isc Thyristors 2N6399 DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater paramet.
1.0 · rating-1
Inchange Semiconductor

2N6544 - Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot vari.
1.0 · rating-1
INCHANGE

2N6704 - Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6704 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(S.
1.0 · rating-1
Inchange Semiconductor

2N6235 - Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Current Gain- : hFE = 25-125@ IC=.
1.0 · rating-1
Inchange Semiconductor

HG2N60 - N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drai.
1.0 · rating-1
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