.
International Rectifier
G4PC30F - INSULATED GATE BIPOLAR TRANSISTOR
PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequen.
IRF
IRG4PH50S - INSULATED GATE BIPOLAR TRANSISTOR
PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( .
Toshiba Semiconductor
GT45F123 - Insulated Gate Bipolar Transistor
GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru.
International Rectifier
IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • L.
International Rectifier
IRGS6B60KD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.
Advanced Power Electronics
AP50G60W-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A.
International Rectifier
IRG4PSC71UD - INSULATED GATE BIPOLAR TRANSISTOR
PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Generation 4 IGBT design provides tighter par.
International Rectifier
IRGSL30B60K - INSULATED GATE BIPOLAR TRANSISTOR
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low .
International Rectifier
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.
Huajing Microelectronics
BT40T60ANFD - Insulated gate bipolar transistor
BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280 .
International Rectifier
IRGB14C40L - INSULATED GATE BIPOLAR TRANSISTOR
PD - 93891A Ignition IGBT Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.
International Rectifier
IRGS14C40L - INSULATED GATE BIPOLAR TRANSISTOR
PD - 93891A Ignition IGBT Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.
BLUE ROCKET ELECTRONICS
BRG60N65D - Insulated-Gate Bipolar Transistor
BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ，,RoHS.
International Rectifier
IRG4BH20K-S - INSULATED GATE BIPOLAR TRANSISTOR
PD -93960 IRG4BH20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , .
International Rectifier
IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losse.
International Rectifier
IRGB4630DPbF - Insulated Gate Bipolar Transistor
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.
Advanced Power Electronics
AP80N03GP-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fas.
