IRF520 Datasheet | Specifications & PDF Download

PD - 91339A IRF520N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520 ·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capabilit

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IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω

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PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.co

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Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis

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isc N-Channel MOSFET Transistor IRF520N，IIRF520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.2Ω ·Enhancement mode ·Fast Switching Speed

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PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.co

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www.vishay.com IRF520 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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PD -91340A IRF520NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°

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Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G Description Fifth

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520FI ·FEATURES ·Typical RDS(on) =0.23Ω ·Avalanche Rugged Technology ·High Current Capabil

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IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power fi

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω

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PD - 94092 IRF520V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fa

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Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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PD - 94306 HEXFET® Power MOSFET l l l l l l l IRF520VS IRF520VL VDSS = 100V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Ratin

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