IRF741 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF741 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vo

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l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switch

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PD - 97642 AUTOMOTIVE GRADE Features l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance

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PD - 94646 IRF7413Z HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graph

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PD - 9.1613A PRELIMINARY Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/

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PD - 96247 IRF7410GPbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Ha

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VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 0.011 52 13 V Ω nC A IRF7413PbF-1 S1 HEXFET® Power MOSFET AA 8D S2 7D S3 6D G4

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PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A B

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www.DataSheet.in PD - 94025 IRF7410 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel V

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 7 9 mΩ 13 91 nC -16 A Featur

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 7 9 mΩ 13 91 nC -16 A Featur

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www.DataSheet4U.com PD - 95017A IRF7413PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Availabl

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PD - 95137A l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating

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PD - 96069A IRF7413ZUPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 96028B IRF7410PbF HEXFET® Power M

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IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

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VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -30 0.020 61 -10 V Ω nC A IRF7416PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6

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PD - 95335B IRF7413ZPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for G

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  AUTOMOTIVE GRADE AUIRF7416Q Features  Advanced Process Technology  Low On-Resistance  Logic Level Gate Drive  P Channel MOSFET  Dynamic dv/d

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