IRFBC30 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Ex

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iscN-Channel MOSFET Transistor IRFBC30A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4.5V (VDS = 10

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PD- 91889A SMPS MOSFET IRFBC30A HEXFET® Power MOSFET www.DataSheet4U.com Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supp

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® IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET TYPE IRFBC30 s s s s s V DSS 600 V R DS(on) < 2.2 Ω ID 3.6 A TYPICAL RD

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PD- 91889A SMPS MOSFET IRFBC30A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power

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PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed po

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SMPS MOSFET PD - 95700 IRFBC30APbF HEXFET® Power MOSFET www.DataSheet4U.com Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power S

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura

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www.vishay.com IRFBC30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf

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PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in T

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PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed po

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura

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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf

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IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10

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iscN-Channel MOSFET Transistor IRFBC30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,

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