IRFP460 Datasheet | Specifications & PDF Download

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

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IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s E

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www.vishay.com IRFP460 Vishay Siliconix Power MOSFET TO-247 D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qg

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460LC FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Vo

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IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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• Lead-Free PD - 94901 IRFP460PbF Document Number: 91237 12/19/03 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460Pb

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460A ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching

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SMPS MOSFET PD-94809 IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power

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IRFP460C February 2002 IRFP460C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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PD - 94902 IRFP460LCPbF • Lead-Free www.irf.com 1 12/19/03 IRFP460LCPbF 2 www.irf.com IRFP460LCPbF www.irf.com 3 IRFP460LCPbF 4 www.irf.

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 4

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HEXFET® Power MOSFET PD - 9.1232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Q

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IRFP460PBF ® IRFP460PBF Pb Free Plating Product Pb 20A,500V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.24 Ω )@VGS=10V ■ Gate

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www.vishay.com IRFP460A Vishay Siliconix Power MOSFET D TO-247 G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Q

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PD- 94853 SMPS MOSFET IRFP460APbF Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lea

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