.
Inchange Semiconductor
98
2SC6090 - Silicon NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed S.
Inchange Semiconductor
67
2SC2625 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robu.
Inchange Semiconductor
59
2SC3866 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lo.
Inchange Semiconductor
32
2SC4242 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4242 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Swit.
Inchange Semiconductor
31
C2026 - 2SC2026
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High .
Inchange Semiconductor
30
2SC4007 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Vo.
Inchange Semiconductor
24
C2238 - 2SC2238
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ¡¤ With TO-220 package ¡¤ Complem.
Inchange Semiconductor
22
C5803 - 2SC5803
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·.
Inchange Semiconductor
20
2SC3679 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Re.
Inchange Semiconductor
20
C3694 - 2SC3694
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3694 DESCRIPTION With TO-220Fa package Large current ,high speed Low.
Inchange Semiconductor
19
2SC3198 - Silicon NPN Power Transistor
isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·.
Inchange Semiconductor
19
2SC3421 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 ·Mi.
Inchange Semiconductor
18
2SC1815 - Silicon NPN Power Transistor
isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1815 DESCRIPTION ·High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) ·Excellent hFE Lin.
Inchange Semiconductor
17
2SC3998 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for.
Inchange Semiconductor
17
C4007 - 2SC4007
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturati.
Inchange Semiconductor
17
2SC1061 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= .
Inchange Semiconductor
16
C1827 - 2SC1827
Inchange Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC.
Inchange Semiconductor
15
2SC5172 - Silicon NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Breakdown Voltage : VCEO =400V APPLICATIONS ·Switching regulator a.
Inchange Semiconductor
15
2SC2233 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A.
Inchange Semiconductor
14
2sc4159 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large C.