J321 Datasheet | Specifications & PDF Download

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J321 n-channel JFET

n-channel JFETs designed for • • • • VHF B.

Toshiba

GT60J321 - Silicon N-Channel IGBT

GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm · · · En.
Rating: 1 (3 votes)
Toshiba Semiconductor

GT15J321 - Silicon N-Channel IGBT

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit.
Rating: 1 (2 votes)
Hitachi

2SJ321 - Silicon P Channel MOS FET

2SJ321 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V.
Rating: 1 (2 votes)
Taiyo Yuden

FBMJ3216HS800 - (FB Series M Type) Rectangular Ferrite Chip Beads

RECTANGULAR FERRITE CHIP BEADS (HIGH CURRENT) FB SERIES M TYPE OPERATING TEMP. K40VJ85C FEATURES Y Y Y FBMJ HS HM HL FBMH f 6Ag Power supply units:.
Rating: 1 (2 votes)
TOSHIBA

20J321 - GT20J321

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switc.
Rating: 1 (2 votes)
Samsung semiconductor

K7J323682M - (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

K7J323682M K7J321882M www.DataSheet4U.com Document Title 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History .
Rating: 1 (2 votes)
Toshiba Semiconductor

SSM3J321T - Silicon P-Channel MOSFET

SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switchin.
Rating: 1 (2 votes)
Siliconix

J321 - n-channel JFET

n-channel JFETs designed for • • • • VHF Buffer Amplifiers • IF Amplifiers H Performance Curves NIP See Section 4 BENEFITS • High Gain 9fs = 120,000 .
Rating: 1 (2 votes)
Toshiba Semiconductor

GT10J321 - Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switc.
Rating: 1 (1 votes)
Chilisin Electronics

PBJ321611T - SMD Multilayer Ferrite Chip Beads

SMD Multilayer Ferrite Chip Beads Multilayer Ferrite Chip Beads Product Identification Chilisin offers a wide range of multi-layered ferrite chip be.
Rating: 1 (1 votes)
Chilisin

SBJ321611T - SMD Multilayer Ferrite Chip Beads

SMD Multilayer Ferrite Chip Beads Multilayer Ferrite Chip Beads Product Identification Chilisin offers a wide range of multi-layered ferrite chip be.
Rating: 1 (1 votes)
Toshiba Semiconductor

GT20J321 - Silicon N-Channel IGBT

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switc.
Rating: 1 (1 votes)
Samsung semiconductor

K7J321882M - (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

K7J323682M K7J321882M www.DataSheet4U.com Document Title 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History .
Rating: 1 (1 votes)
Toshiba

GT35J321 - Silicon N-Channel IGBT

GT35J321 www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inve.
Rating: 1 (1 votes)
Taiyo Yuden

FBMJ3216 - (FB Series M Type) Rectangular Ferrite Chip Beads

RECTANGULAR FERRITE CHIP BEADS (HIGH CURRENT) FB SERIES M TYPE OPERATING TEMP. K40VJ85C FEATURES Y Y Y FBMJ HS HM HL FBMH f 6Ag Power supply units:.
Rating: 1 (1 votes)
Toshiba Semiconductor

GT40J321 - Silicon N-Channel IGBT

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD inclu.
Rating: 1 (1 votes)
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