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Global Mixed-mode Technology G1084-XX 5A Low-Dropout Linear Regulator Features „ Available in 1.5V, 1.8V, 2.5V, 3.3V version „ TO-252,TO-263 and TO

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Global Mixed-mode Technology G1084-XX 5A Low-Dropout Linear Regulator Features „ Available in 1.5V, 1.8V, 2.5V, 3.3V version „ TO-252,TO-263 and TO

(38 views)

NP6601AMR 30V N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6601AMR uses advanced trench technology to provide excell

(38 views)

Global Mixed-mode Technology G1084-XX 5A Low-Dropout Linear Regulator Features „ Available in 1.5V, 1.8V, 2.5V, 3.3V version „ TO-252,TO-263 and TO

(37 views)

NP6020D6-Sn 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6020D6-Sn uses advanced trench technology that is uniquely op

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NP60S04D6-Sn 40V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP60S04D6-Sn uses SGT technology that is uniquely optimized to

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NP6008BSR 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimi

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NP6661BQR N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent

(34 views)

Global Mixed-mode Technology G1084-XX 5A Low-Dropout Linear Regulator Features „ Available in 1.5V, 1.8V, 2.5V, 3.3V version „ TO-252,TO-263 and TO

(33 views)

NP6666D6 N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RD

(32 views)

60V N-Channel Enhancement Mode MOSFET NP6008N Description Schematic diagram The NP6008N uses advanced trench technology and design to provide exce

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AWT6103M5 Cellular Dual Mode AMPS/TDMA Mode 3.5V/30 dBm Linear Power Amplifier Module Advanced Product Information Rev. 1 • • • • • • • • • • FEATUR

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www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PA

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NP4008SR 40V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4008SR uses trench MOSFET technology that is uniquely optimized

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NP6884D6 40V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6884D6 uses advanced trench technology to provide excellent

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NP4P06MR-M 60V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4P06MR-M uses advanced trench technology and design to provide

(30 views)

NP3401VR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3401VR uses advanced trench technology to provide excellent RDS(

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N-Channel Enhancement Mode MOSFET NP3400MR-S Description Schematic diagram The NP3400MR-S uses advanced trench technology to provide excellent RDS

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NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector NE68018 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (

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NP4886SR 40V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4886 uses advanced trench technology to provide excellent R

(29 views)