ME54BS01 (Minewsemi)
Bluetooth LE Module
Bluetooth LE Module ME54BS01
Datasheet
V 1.0.0
Copyright© Shenzhen Minewsemi Co., Ltd.
02
ME54BS01 Datasheet
Version Note
Version
1.0.0
Details
F
(43 views)
ME50N02-G (Matsuki)
N-Channel MOSFET
N- Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using
(38 views)
SAME51N19 (Microchip)
32-bit ARM Cortex-M4F MCUs
32-bit ARM® Cortex®-M4F MCUs with 1 Msps 12-bit ADC, QSPI, USB, Ethernet, and PTC
SAM D5x/E5x Family
Features
Operating Conditions: • 1.71V to 3.63V,
(38 views)
ME50N08 (Matsuki)
N-Channel MOSFET
N- Channel 80V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using
(36 views)
SAME53J20 (Microchip)
32-bit ARM Cortex-M4F MCUs
32-bit ARM® Cortex®-M4F MCUs with 1 Msps 12-bit ADC, QSPI, USB, Ethernet, and PTC
SAM D5x/E5x Family
Features
Operating Conditions: • 1.71V to 3.63V,
(35 views)
ME501610 (Powerex Powers)
Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts)
ME501210 ME501610
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
100 Amperes/12
(34 views)
ME50N10 (Matsuki)
N-Channel MOSFET
N- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced usin
(34 views)
AME5269 (AME)
340KHz Synchronous Rectified Step-Down Converter
AME
AME5269
2A, 28V, 340KHz Synchronous Rectified Step-Down Converter
n General Description
n Features
The AME5269 is a fixed frequency monolithic
(34 views)
ME50N06A-G (Matsuki)
N-Channel MOSFET
N- Channel 60V (D-S) MOSFET
ME50N06A/ME50N06A-G
GENERAL DESCRIPTION
The ME50N06A is the N-Channel logic enhancement mode power field effect transist
(33 views)
ME50N02 (Matsuki)
N-Channel MOSFET
N- Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using
(33 views)
DME500 (GHz Technology)
Pulsed Avionics
DME 500
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz
www.datasheet4u.com
GENERAL DESCRIPTION
The DME 500 is a high power COMMON BASE bipolar
(33 views)
ME50N06A (Matsuki)
N-Channel MOSFET
N- Channel 60V (D-S) MOSFET
ME50N06A/ME50N06A-G
GENERAL DESCRIPTION
The ME50N06A is the N-Channel logic enhancement mode power field effect transist
(32 views)
AME5268 (AME)
340KHz Synchronous Rectified Step-Down Converter
AME
AME5268
3A, 28V, 340KHz Synchronous Rectified Step-Down Converter
n General Description
n Features
The AME5268 is a fixed frequency monolithic
(32 views)
ME50N06T (Matsuki)
N-Channel MOSFET
N-Channel 60-V (D-S) MOSFET
ME50N06T/ME50N06T-G
GENERAL DESCRIPTION
The ME50N06T is the N-Channel logic enhancement mode power field effect transist
(31 views)
ME50N06T-G (Matsuki)
N-Channel MOSFET
N-Channel 60-V (D-S) MOSFET
ME50N06T/ME50N06T-G
GENERAL DESCRIPTION
The ME50N06T is the N-Channel logic enhancement mode power field effect transist
(31 views)
ME50P06 (Matsuki)
P-Channel MOSFET
P- Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50P06 is the P-Channel logic enhancement mode power field effect transistors are produced using
(31 views)
ME500810 (Powerex Powers)
Three-Phase Diode Bridge Modules (100 Amperes/800 Volts)
ME500810
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
100 Amperes/800 Volts
(30 views)
ME501206 (Powerex Powers)
Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts)
ME501206 ME501606
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
60 Amperes/120
(30 views)
ME50N10-G (Matsuki)
N-Channel MOSFET
N- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced usin
(30 views)
ME50P06-G (Matsuki)
P-Channel MOSFET
P- Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50P06 is the P-Channel logic enhancement mode power field effect transistors are produced using
(30 views)
