MJD Datasheet | Specifications & PDF Download

Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Appl

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Features  BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Ideal for Power Switching or Amplification Application

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V

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Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2 /7' 72 -3L 3ODVWLF (QFDSVXODWH7UDQVLVWRUV 0-' TRANSISTOR（NPN） )($785(6 ∙ High DC Current Gai

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MJD122 — NPN Silicon Darlington Transistor March 2016 MJD122 NPN Silicon Darlington Transistor Features • D-PAK for Surface Mount Applications • Hi

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MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 s s s Marking MJ

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monoli

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SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed sw

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MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such

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MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2

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Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP31C. 

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isc Silicon NPN Darlington Power Transistor MJD44E3 DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Vo

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MJD3055T4 Datasheet Low voltage NPN power transistor TAB 23 1 DPAK C 2, TAB 1 B Features • Surface-mounting DPAK (TO-252) power package in tape and

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