MJD117 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applicat

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-251-3L FEATURES z High DC

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MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applicati

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switc

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MJD117 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ，E C TIP117 。

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SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD117 TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general pur

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SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL

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