NSVMMBD352WT1G (ON Semiconductor)
Dual Schottky Barrier Diode
MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use
(39 views)
MMBD352LT1 (ON)
Dual Hot Carrier Mixer Diodes
www.DataSheet4U.com
MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer a
(29 views)
MMBD352 (Pan Jit International)
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD101/MMBD352/MMBD354/MMBD355
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 250 mW
FEATURES
• Low Capacitance,Minimizing
(26 views)
MMBD352WT1G (ON Semiconductor)
Dual Schottky Barrier Diode
MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use
(25 views)
MMBD352WT1 (ON)
Dual Shottky Barrier Diode
www.DataSheet4U.com
MMBD352WT1 Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for
(25 views)
MMBD352 (ON)
Dual Hot Carrier Mixer Diodes
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352LT1/D
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UH
(23 views)
MMBD352 (Won-Top Electronics)
SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS
MMBD352 / 353 / 354 / 355
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
L
Low Forward Voltage
(22 views)
MMBD352 (LGE)
Dual Hot Carrier Mixer Diodes
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance— Less than 1.0pF@zero V.
Low forward voltage—IF=10mA. Power diss
(22 views)
MMBD352W (PAN JIT)
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD101W/MMBD352W/MMBD354W/MMBD355W
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 200 mW
FEATURES
• Low Capacitance,Minimiz
(22 views)
MMBD352 (GME)
Dual Hot Carrier Mixer Diodes
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipa
(21 views)
MMBD352W (GME)
Schottky Barrier Diode
Production specification
Schottky Barrier Diode
FEATURES
Very low capacitance-less than 1.0Pf @zero volts.
Pb
Lead-free
Low forward voltage-0.
(21 views)
MMBD352LT1G (ON Semiconductor)
Dual Hot Carrier Mixer Diodes
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G
Dual Hot Carrier Mixer Diodes
These devices are designed primarily
(20 views)
MMBD352W (WON-TOP)
SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS
MMBD352W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
Low Forward Voltage PN Junction Guard Rin
(20 views)
MMBD352LT1 (Motorola)
(MMBD35xLT1) Dual Hot Carrier Mixer Diodes
MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352LT1/D
Dual Hot Carrier Mixer Diodes
These devices are desi
(20 views)
MMBD352LT1 (Leshan Radio Company)
Dual Hot Carrier Mixer Diodes
LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for us
(19 views)
MMBD352WT1 (Leshan Radio Company)
Dual Schottky Barrier Diode
(19 views)
MMBD352WT1 (Motorola)
Dual Schottky Barrier Diode
MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352WT1/D
Dual Schottky Barrier Diode
These devices are design
(18 views)
MMBD352 (Motorola)
DUAL HOT CARRIER MIXER DIODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage
Symbol vR
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C Der
(18 views)
