MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIG.
ON Semiconductor
MMBD352LT1G - Dual Hot Carrier Mixer Diodes
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily.
GME
MMBD352 - Dual Hot Carrier Mixer Diodes
Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipa.
ON
MMBD352WT1 - Dual Shottky Barrier Diode
www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for .
GME
MMBD352W - Schottky Barrier Diode
Production specification Schottky Barrier Diode FEATURES Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free Low forward voltage-0..
Pan Jit International
MMBD352 - SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing .
ON Semiconductor
NSVMMBD352WT1G - Dual Schottky Barrier Diode
MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use.
ON Semiconductor
MMBD352WT1G - Dual Schottky Barrier Diode
MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use.
LGE
MMBD352 - Dual Hot Carrier Mixer Diodes
MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features Very low capacitance— Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power diss.
PAN JIT
MMBD352W - SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Minimiz.
Leshan Radio Company
MMBD352LT1 - Dual Hot Carrier Mixer Diodes
LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for us.
WON-TOP
MMBD352W - SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Very Low Capacitance Low Forward Voltage PN Junction Guard Rin.
Motorola
MMBD352LT1 - (MMBD35xLT1) Dual Hot Carrier Mixer Diodes
MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are desi.
Won-Top Electronics
MMBD352 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Very Low Capacitance L Low Forward Voltage .
ON
MMBD352 - Dual Hot Carrier Mixer Diodes
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UH.
ON
MMBD352LT1 - Dual Hot Carrier Mixer Diodes
www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer a.
Motorola
MMBD352WT1 - Dual Schottky Barrier Diode
MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are design.
Motorola
MMBD352 - DUAL HOT CARRIER MIXER DIODE
MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Der.