MMBD352 Datasheet | Specifications & PDF Download

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily

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® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance L  Low Forward Voltage 

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UH

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MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use

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MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power diss

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MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Minimiz

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LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for us

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are desi

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MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing

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Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipa

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are design

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MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Der

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www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer a

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www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for

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Production specification Schottky Barrier Diode FEATURES  Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free  Low forward voltage-0.

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® WON-TOP ELECTRONICS MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Forward Voltage  PN Junction Guard Rin

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