.
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MSC8205S - Dual N-Channel Enhancement Mode Power MOS FET
MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4..
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MSP2321 - P-Channel Enhancement Mode Power MOSFET
MSP2321 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-.
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MSP9435W - P-Channel Enhancement Mode Power MOSFET
MSP9435W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS.
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MSN7002F - N-Channel Enhancement Mode Power MOS FET
MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design .
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MSN08B2K - N-Channel MOSFET
MSN08B2K 80V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V ● High density cell design fo.
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MSP3415E - P-Channel Enhancement Mode Power MOSFET
MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
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MSN0207E - N-Channel MOSFET
MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.
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MSN0880K - N-Channel Enhancement Mode Power MOS FET
MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology fo.
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MSC0207GE - Dual N-Channel MOSFET
MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=.
MORESEMI
MSC0207SE - Dual N-Channel MOSFET
MSC0207SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=.
MORESEMI
MSC0207W - Dual P-Channel MOSFET
MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ .
MORESEMI
MSN06B2K - N-Channel MOSFET
MSN06B2K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =115A RDS(ON) < 7.5mΩ @ VGS=10V (Typ6.5mΩ) ● Special pr.
Morethanall
DAP07 - CONNECTOR
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com .
Lemore
MD-PS002 - Air Pressure Sensor
MD-PS002 Series Air Pressure Sensor Model Number Pressure Range Size Overload Capacity Working Voltage Output Accuracy Operating Temperature Pressure.
Rohm
BD9130EFJ - Output 2A or More High-efficiency Step-down Switching Regulator
Single-chip Type with Built-in FET Switching Regulator Series Output 2A or More High-efficiency Step-down Switching Regulator with Built-in Power MOS.
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MSP0625K - P-Channel Enhancement Mode Power MOSFET
MSP0625K -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig.
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MSP0625D - P-Channel Enhancement Mode Power MOSFET
MSP0625D -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig.
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MSN6004F - 600V(D-S) N-Channel Enhancement Mode Power MOS FET
MSN6004F 600V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V ● High density cell design .
MORESEMI
MSN0409W - N-Channel MOSFET
MSN0409W 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V ● H.
