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MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le

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MD-PS002 Series Air Pressure Sensor Model Number Pressure Range Size Overload Capacity Working Voltage Output Accuracy Operating Temperature Pressure

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MSP0625K -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig

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www.DataSheet4U.net GB www.DataSheet4U.net With KEB COMBIVERT, reputable manufacturers have for years produced innovative high quality machine syst

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MSP0205A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=

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MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design

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Samsung Electronics Fiberoptics products Loose Tube Cable - SJNA Single Jacket Non-Armored Description SAMSUNG Single Jacket Non-Armored cables are l

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MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD

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MSP0315D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V

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MSP0625D -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V ● High density cell desig

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Reversible Motor Drivers for Brush Motors 1.0A or More Reversible Motor Drivers (2 Motors) BA6247FP-Y, BA6238A No.11008EBT04 ●Description The revers

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MSN0304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ●

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MSN06B0F 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) ● Special pro

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Samsung Electronics Fiberoptics products Loose Tube Cable - SJNA Single Jacket Non-Armored Description SAMSUNG Single Jacket Non-Armored cables are l

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MSP0440D -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ● High density cell desig

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Reversible Motor Drivers for Brush Motors 2.0A or More Reversible Motor Drivers (Single Motor) BA6219BFP-Y,BA6222 No.11008EBT03 ●Description These m

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Reversible Motor Drivers for Brush Motors 2.0A or More Reversible Motor Drivers (Single Motor) BA6219BFP-Y,BA6222 No.11008EBT03 ●Description These m

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MSN08B2K 80V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V ● High density cell design fo

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MSN0603L 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● H

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