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INCHANGE
IRFZ44N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta.
Thinki Semiconductor
IRF3205 - N-Channel Trench Process Power MOSFET Transistor
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.
Inchange Semiconductor
IRF3205 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.
Inchange Semiconductor
5N60 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fa.
Silan Microelectronics
SVS5N70D - 700V DP MOS POWER TRANSISTOR
SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MO.
Inchange Semiconductor
4N65 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot.
Inchange Semiconductor
IRFZ24N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta.
Inchange Semiconductor
IRFP250 - N-Channel MOSFET Transistor
iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.
Inchange Semiconductor
IRF3710 - N-Channel MOSFET Transistor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St.
Excelliance MOS
A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.
Inchange Semiconductor
IRFP450 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St.
Inchange Semiconductor
IRF1404 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo.
Inchange Semiconductor
18N50 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra.
Inchange Semiconductor
IRFP250N - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo.
INCHANGE
4N60 - N-Channel Mosfet Transistor
isc N-Channel MOSFET Transistor 4N60 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minim.
Toshiba
K2717 - Silicon N Channel MOS Type Field Effect Transistor
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d.
Inchange Semiconductor
IRFP460 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St.
Inchange Semiconductor
IRFB4110 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp.
Inchange Semiconductor
18N20 - N-Channel Mosfet Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1.
Inchange Semiconductor
10N60 - N-Channel Mosfet Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistanc.
