Diotec Semiconductor
MS80 - Surface Mount Si-Bridge-Rectifiers
MS40 MS500
MS40 MS500
Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Version 2007-01-16
1.5-0.1 0.2
N
(14 views)
Ruimeng
MS8052 - CMOS Operational Amplifier
MS8051/2/4
250MHz Rail-to-Rail Output CMOS Operational Amplifiers
DESCRIPTION
The MS805x are rail-to-rail output voltage feedback amplifiers offeri
(14 views)
H&M Semiconductor
HMS80N25 - N-Channel Super Trench II Power MOSFET
HMS80N25, HMS80N25D
N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is uniquely optimi
(14 views)
H&M Semiconductor
HMS80N85D - N-Channel Super Trench II Power MOSFET
HMS80N85, HMS80N85D
N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is uniquely optimi
(14 views)
Microsemi
MS8002 - GaAs Schottky Diodes
® TM
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001 – MS8004
Features
● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha
(13 views)
Fairchild Semiconductor
FDMS8050ET30 - MOSFET
FDMS8050ET30 N-Channel PowerTrench® MOSFET
January 2015
FDMS8050ET30
N-Channel PowerTrench® MOSFET
30 V, 423 A, 0.65 mΩ
Features
General Descripti
(12 views)
Microsemi
MS8001 - GaAs Schottky Diodes
® TM
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001 – MS8004
Features
● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha
(12 views)
H&M Semiconductor
HMS80N10 - N-Channel Super Trench II Power MOSFET
HMS80N10, HMS80N10D
N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is uniquely optimi
(12 views)
Fairchild Semiconductor
FDMS8023S - MOSFET
FDMS8023S N-Channel PowerTrench® SyncFETTM
FDMS8023S
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 2.4 mΩ
October 2014
Features
General Description
(11 views)
Samsung
LMS800JF01 - Display
Reference Only
www.DataSheet4U.com
Preliminary
Product Information
MODEL NO. : LMS800SF01
(General향)
Issued date : JAN. 08. 2008
Note : This produ
(11 views)
Microsemi
MS8003 - GaAs Schottky Diodes
® TM
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001 – MS8004
Features
● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha
(11 views)
SAFRAN
MS8000 - Single axis analog accelerometer
Inertial Sensor
MS8000 – DATASHEET
Single axis analog accelerometer
The MS8000 product is a single axis MEMS capacitive accelerometer based on a bulk
(11 views)
Fairchild Semiconductor
FDMS8025S - MOSFET
FDMS8025S N-Channel PowerTrench® SyncFETTM
FDMS8025S
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 2.8 mΩ
October 2014
Features
General Description
(10 views)
Ruimeng
MS8054 - CMOS Operational Amplifier
MS8051/2/4
250MHz Rail-to-Rail Output CMOS Operational Amplifiers
DESCRIPTION
The MS805x are rail-to-rail output voltage feedback amplifiers offeri
(10 views)
Microsemi
MS8004 - GaAs Schottky Diodes
® TM
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001 – MS8004
Features
● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha
(10 views)
Ruimeng
MS8051 - CMOS Operational Amplifier
MS8051/2/4
250MHz Rail-to-Rail Output CMOS Operational Amplifiers
DESCRIPTION
The MS805x are rail-to-rail output voltage feedback amplifiers offeri
(9 views)
H&M Semiconductor
HMS80N25D - N-Channel Super Trench II Power MOSFET
HMS80N25, HMS80N25D
N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is uniquely optimi
(8 views)
H&M Semiconductor
HMS80N85 - N-Channel Super Trench II Power MOSFET
HMS80N85, HMS80N85D
N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is uniquely optimi
(8 views)
Fairchild Semiconductor
FDMS8050 - MOSFET
FDMS8050 N-Channel PowerTrench® MOSFET
March 2015
FDMS8050
N-Channel PowerTrench® MOSFET
30 V, 200 A, 0.65 mΩ
Features
General Description
Max
(7 views)
Fairchild Semiconductor
FDMS8020 - MOSFET
FDMS8020 N-Channel PowerTrench® MOSFET
FDMS8020
N-Channel PowerTrench® MOSFET
30 V, 131 A, 2.5 mΩ
Features
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID =
(7 views)