MS40 ... MS500 MS40 ... MS500 Surface Mount Si-Br.
FDMS8020 - MOSFET
FDMS8020 N-Channel PowerTrench® MOSFET FDMS8020 N-Channel PowerTrench® MOSFET 30 V, 131 A, 2.5 mΩ Features Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID =.FDMS8023S - MOSFET
FDMS8023S N-Channel PowerTrench® SyncFETTM FDMS8023S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ October 2014 Features General Description.MS8001 - GaAs Schottky Diodes
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha.FDMS8050ET30 - MOSFET
FDMS8050ET30 N-Channel PowerTrench® MOSFET January 2015 FDMS8050ET30 N-Channel PowerTrench® MOSFET 30 V, 423 A, 0.65 mΩ Features General Descripti.FDMS8050 - MOSFET
FDMS8050 N-Channel PowerTrench® MOSFET March 2015 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description Max .FDMS8090 - MOSFET
FDMS8090 PowerTrench® Symmetrical Dual April 2013 FDMS8090 PowerTrench® Symmetrical Dual 100 V N-Channel MOSFET Features Max rDS(on) = 13 mΩ at VG.FDMS8026S - MOSFET
FDMS8026S N-Channel PowerTrench® SyncFETTM FDMS8026S N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 4.3 mΩ October 2014 Features General Description.FDMS8027S - MOSFET
FDMS8027S N-Channel PowerTrench® SyncFETTM FDMS8027S N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 5.0 mΩ October 2014 Features General Description.FDMS8025S - MOSFET
FDMS8025S N-Channel PowerTrench® SyncFETTM FDMS8025S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ October 2014 Features General Description.MS809 - (MS809 / MS845) Schottky Diodes
www.DataSheet4U.com .MS8054 - CMOS Operational Amplifier
MS8051/2/4 250MHz Rail-to-Rail Output CMOS Operational Amplifiers DESCRIPTION The MS805x are rail-to-rail output voltage feedback amplifiers offeri.MS8051 - CMOS Operational Amplifier
MS8051/2/4 250MHz Rail-to-Rail Output CMOS Operational Amplifiers DESCRIPTION The MS805x are rail-to-rail output voltage feedback amplifiers offeri.MS8002 - GaAs Schottky Diodes
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha.MS8004 - GaAs Schottky Diodes
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha.MS8003 - GaAs Schottky Diodes
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha.FDMS8018 - MOSFET
FDMS8018 N-Channel PowerTrench® MOSFET December 2015 FDMS8018 N-Channel PowerTrench® MOSFET 30 V, 175 A, 1.8 mΩ Features Max rDS(on) = 1.8 mΩ at .MS80 - Surface Mount Si-Bridge-Rectifiers
MS40 MS500 MS40 MS500 Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage Version 2007-01-16 1.5-0.1 0.2 N.MS808C06 - Schottky Barrier Diode
www.DataSheet4U.com MS808C06 (30A) SCHOTTKY BARRIER DIODE 9.0±0.2 7.0±0.2 4 0.6±0.2 0.1 (60V / 30A ) Outline drawings, mm 10.1±0.3 9.0±0.2 Solder.MS845 - (MS809 / MS845) Schottky Diodes
www.DataSheet4U.com .MMS8050 - SOT-23 Plastic-encapsulate Bipolar Transistors
MCC Features • • • • • • omponents 20736 Marilla Street Chatsworth # $ % # MMS8050.