Micross Components Datasheet | Specifications & PDF Download

ICE20N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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10 Bit, 40MHz Current -Output DACs FEATURES • +2.7V to +3.3V Single-Supply Operation • Wide Spurious-Free Dynamic Range: 70dB at • FfOuUllTy=D2i.f2fe

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COTS PEM SSRAM AS5SP256K36 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect FEATURES • Synchronous Operation in relation to th

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SSRAM AS5SS512K36 512K x 36 SSRAM Flow-Through SRAM No Bus Latency 100 99 PIN ASSIGNMENT (Top View) 100-Pin TQFP (DQ) BWD BWC BWB BWA CE1 CE2 CE3 VDD

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SSRAM AS5SS512K36 512K x 36 SSRAM Flow-Through SRAM No Bus Latency 100 99 PIN ASSIGNMENT (Top View) 100-Pin TQFP (DQ) BWD BWC BWB BWA CE1 CE2 CE3 VDD

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PRELIMINARY SRAM AS5LC256K16 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-T

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PRELIMINARY SRAM AS5LC512K16 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 15 & 20ns • A

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LOW-DROPOUT VOLTAGE REGULATOR AVAILABLE AS MILITARY SPECIFICATIONS MIL-STD-883, Class B para 1.2.2 compliant FEATURES High output voltage accuracy Gu

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PRELIMINARY SPECIFICATION POS Adj Voltage Regulator AS117 RAD-TOL PIN ASSIGNMENT (Top View) Positive Adjustable Voltage Regulator AVAILABLE AS MILIT

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ADVANCE INFORMATION AS6nvLC512K8 AS6nvLC256K16 512K x 8 / 256K x 16 nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage FEATURES • -55oC to 125oC O

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ADVANCE INFORMATION AS6nvLC512K8 AS6nvLC256K16 512K x 8 / 256K x 16 nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage FEATURES • -55oC to 125oC O

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AS5SP128K32 Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Pipeline Burst, Single Cycle Deselect FEATURES • Synchronous Operatio

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SSRAM AS5SS512K36 512K x 36 SSRAM Flow-Through SRAM No Bus Latency 100 99 PIN ASSIGNMENT (Top View) 100-Pin TQFP (DQ) BWD BWC BWB BWA CE1 CE2 CE3 VDD

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iPEM 16 Mb ASYNC SRAM AS8SLC512K32PECA 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated

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ICE10N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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ICE10N73 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC

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ICE10N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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ICE10N73FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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ICE11N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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