NX6 Datasheet | Specifications & PDF Download

NEC's 1310 nm InGaAsP MQW DFB NX6301 LASER DIODE IN CAN PACKAGE SERIES FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.

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LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum

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Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100

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A Business Partner of Renesas Electronics Corporation. NX6350GP Series FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6350GP serie

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PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's

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PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6307 SERIES FOR 2.5 Gb/s APPLICATIONS DESCRIPTION NEC's NX6307 Serie

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NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6504 Series FOR FIBER OPTIC COMMUNICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LO

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NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5

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PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW •

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PRELIMINARY DATA SHEET NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER:

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LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6314EH LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW

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NX6020CAKS 60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET 18 January 2018 Product data sheet 1. General description Complementary N/P-chan

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NX6008NBK 60 V, N-channel Trench MOSFET 19 August 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor

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NX6008NBKS 60 V, dual N-channel Trench MOSFET 19 August 2021 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect

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LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quan

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LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU

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CNX62A NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 2.54 7.0 6.0 1.2 1 2 3 Dimension

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