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NTB75N06 - Power MOSFET
NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications .NTBG060N065SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 m.NTBLS1D5N08MC - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel, TOLL 80 V, 1.53 mW, 298 A NTBLS1D5N08MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitan.65N02R - NTB65N02R
NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID.NTBG015N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS.NTBGS2D5N06C - N-Channel MOSFET
MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.5 mW, 169 A NTBGS2D5N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita.NTB75N03L09 - Power MOSFET
NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This Logic Level Vertical Power MOSFET is a general purpose part t.NTBG040N120M3S - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40 .NTBGS002N06C - N-Channel MOSFET
MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.1 mW, 211 A NTBGS002N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita.NTB5860N - N-Channel Power MOSFET
NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • T.NTB082N65S3F - Power MOSFET
NTB082N65S3F Power MOSFET, N‐Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v.NTB011N15MC - N-Channel MOSFET
MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW .NTB7D3N15MC - N-Channel MOSFET
MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTB7D3N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 7.3 mW at .NTBG060N090SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features • Typ. RDS(on) = 60 mW @ VG.NTBG014N120M3P - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .NTBG025N065SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m.NTBLS0D7N06C - N-Channel Power MOSFET
MOSFET – Power, Single, N-Channel, TOLL 60 V, 0.75 mW, 470 A NTBLS0D7N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitan.NTBL075N065SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, TOLL NTBL075N065SC1 Features • Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @ .NTB5426N - Power MOSFET
NTB5426N, NTP5426N, NVB5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 Features • Low RDS(on) • High Current Capability • Avalanche En.NTB10N40 - Power MOSFET
NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp.